Cross-Domain-Workshop of T3.1: Nanoscale FET

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UPC Barcelona will be the location for a series of Cross Domain Workshops of the Work packages WP3, WP4 and WP5 of the NEREID project (“NanoElectronics Roadmap for Europe: Identification and Dissemination”) It will take place in December 13-15, 2017.

This page is concerning the Cross-Domain-Workshop of T3.1: Nanoscale FET

Parc Guell 

Location
UPC Barcelona,
Campus Nord,
Building Vèrtex,
room VS208 (floor -2).
Pl. Eusebi Güell, 6.
08034 Barcelona.
See map

Schedule:
Dec. 13, 2017, 8.00 - 13.00

Contact:
Ms. Sylvie Pitot
Phone: +33 (0)4 56 52 95 08  
e-mail: sylvie [dot] pitotatgrenoble-inp [dot] fr


 

 

 

 

Programme

Dear NEREID Technology Experts for Nanoscale FETs,

You will find below the preliminary program for our NEREID Workshop devoted to Nanoscale FET, which will be held in Barcelona (UPC) on December 13th. Some colleagues will not be able to join this Workshop but we will keep in touch with them in order to finalise the Roadmap for each topic.

The goal of this domain workshop is to update the mid-term roadmap with new information, additional time horizons (we proposed to use at least 4 time horizons for medium and long term planned evolution of the main FOMs: 2023/2026/2029/2033), and possible complementary topics (not included in the first draft of the roadmap, e.g. 2D channel MOS devices, Reliability/variability), which will be taken into account for the final version of the Roadmap.

Preliminary Program:

8.00 Welcome -8.30 Introduction (Francis Balestra)

9.00 FDSOI (Stephane Monfray)

9.30 FinFET (Anda Mocuta)

10.00 2D Channel MOS Devices (Paul Hurley)

10.30 Sequential 3D Integration (Claire Fenouillet-Beranger, to be confirmed)

11.00 Nanoscale FET Reliability/Variability  (Ben Kaczer)

11.30 Discussion on the Roadmap, Exchanges with the other NEREID Tasks/WPs, Next steps

13.00 Lunch

Please let us know if you have any question or comment.